6 November 1975 Surface Emitting Sources For Optical Waveguides
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Abstract
The basic design principles of radiation emitting diodes are discussed. Theoretical and experimental values of radiant power, radiant intensity, and radiance of GaAs and GaAlAs infrared surface emitting sources are reviewed. A comparison of various device geometries shows that small-area, high-radiance, etched-well emitters are the optimum design for coupling to individual optical fibers but that high-radiant-intensity shaped emitters are the optimum design for coupling to larger diameter fiber bundles. Improved linearity can be achieved with GaAlAs planar emitters incorporating a buried-junction structure to minimize non-radiative surface recombination.
© (1975) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eugene G. Dierschke, "Surface Emitting Sources For Optical Waveguides", Proc. SPIE 0063, Guided Optical Communications, (6 November 1975); doi: 10.1117/12.954476; https://doi.org/10.1117/12.954476
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