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20 September 1976 Photomasks For Micron Geometry Transistors
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Abstract
Photomasks used to produce high frequency microwave transistors have unique and different requirements than do integrated circuit photomasks. Critical dimensions have a tolerance of ± 0.2 micrometers. In most cases the critical geometry is 1.0 micrometer or less. Defect densities are very lenient as compared to integrated circuits. We inspect to a 4.0 A.Q.L. In a two-inch square array we have on the order of 8,000 to 15,000 discrete device patterns. Inspection is made on a random sample as shown on the following table.
© (1976) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Herb G. Hasemann "Photomasks For Micron Geometry Transistors", Proc. SPIE 0080, Developments in Semiconductor Microlithography, (20 September 1976); https://doi.org/10.1117/12.954850
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