30 December 1976 Today's Capabilities Of Microwave (0.2 GHz TO 18 GHz) Acousto-Optic Devices
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Abstract
A well-developed technology of depositing ZnO piezoelectric transducers on crystals for bulk-wave acoustic delay devices has been applied to the manufacture of microwave acousto-optic devices. Unlike the basic difficulties encountered when attempting high frequency operation of bonding thin-plate piezoelectric transducers, sputtered ZnO transducers operate well at high frequencies but encounter difficulty with thick films (> lOmicrons), The ZnO films for longitudinal bulk^wave propagation work best when confined to the frequency band of 200 MHz to 18 GHz, ZnO transducer depositions are not suitable for some materials, including PbMoO4, and TeO2, which have very high acousto-optic figures of merit, but do work well with LiNbO3, LiTaO3, TiO2, Ba2NaNb5O15 fused silica, YAG, single-crystal quartz and sapphire. Broad bandwidths can be achieved using ZnO transducers. Acousto-optic units with more than 1 GHz (3 dB) bandwidth have been built with LiNb03 and LiTaO3 as the acousto-optic material, with center frequencies ranging from 2.6 GHz to 6.5 GHz. Transducer conversion loss (total loss encountered from incident RF signal to acoustic signal including matching network losses) for the 1 GHz bandwidth units is less than 10 dB. Examples of broadband microwave acousto-optic devices (presently in production) for use with cavity dumpers are given.
© (1976) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. K. Kirchner, J. R. Yaeger, "Today's Capabilities Of Microwave (0.2 GHz TO 18 GHz) Acousto-Optic Devices", Proc. SPIE 0090, Acousto-Optics: Device Development/Instrumentation/Applications, (30 December 1976); doi: 10.1117/12.955045; https://doi.org/10.1117/12.955045
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