Infrared Microscopy For Evaluation Of Silicon Devices And Die-Attach Bonds

Barry G. Cohen

doi:10.1117/12.955430

26 August 1977 Infrared Microscopy For Evaluation Of Silicon Devices And Die-Attach Bonds

Barry G. Cohen

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Proceedings Volume 0104, Multidisciplinary Microscopy; (1977) https://doi.org/10.1117/12.955430
Event: 1977 SPIE/SPSE Technical Symposium East, 1977, Reston, United States

Abstract

Infrared Microscopy is useful for nondestructive evaluation of semiconductor materials and devices. At wavelengths near 1100 nm, silicon and GaAs have good transparency. Therefore, internal defect structures may be observed. Techniques of infrared microscopy and methods of contrast enhancement such as decoration, interference contrast, and fluorescence are discussed. Applications are presented including examples of precipitates in silicon, die attach bond defects, and strain patterns in epitaxial layers and completed devices.

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Barry G. Cohen, Barry G. Cohen, } "Infrared Microscopy For Evaluation Of Silicon Devices And Die-Attach Bonds", Proc. SPIE 0104, Multidisciplinary Microscopy, (26 August 1977); doi: 10.1117/12.955430; https://doi.org/10.1117/12.955430

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