26 August 1977 Ion Imaging In Secondary Ion Mass Spectrometry
Author Affiliations +
Proceedings Volume 0104, Multidisciplinary Microscopy; (1977); doi: 10.1117/12.955422
Event: 1977 SPIE/SPSE Technical Symposium East, 1977, Reston, United States
Abstract
In the technique of analysis known as secondary ion mass spectrometry (SIMS), a beam of energetic ions (2-40 keV) strikes a sample(pd dislodges atoms lying near the surface by the process known as sputtering, Figure 1. A small fraction (104 - 10 2) of the sputtered sample atoms is emitted in a charged state, the so-called secondary ions. Because of their electrical charge, the secondary ions can be attracted by appropriate electrical fields into a mass spectrometer which disperses the ions according to their mass-to-charge ratio. Ion detection is accomplished by either an electrical detector or a photographic plate. By varying the strength of the magnetic and/or electrical field of the mass spectrometer, a mass spectrum of the positive or negative sputtered ions in the form of intensity versus mass-to-charge ratio is obtained.
© (1977) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dale E. Newbury, "Ion Imaging In Secondary Ion Mass Spectrometry", Proc. SPIE 0104, Multidisciplinary Microscopy, (26 August 1977); doi: 10.1117/12.955422; https://doi.org/10.1117/12.955422
PROCEEDINGS
5 PAGES


SHARE
KEYWORDS
Ions

Microscopes

Chemical elements

Spectroscopy

Beryllium

Silicon

Mass spectrometry

Back to Top