26 August 1977 Ion Imaging In Secondary Ion Mass Spectrometry
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Proceedings Volume 0104, Multidisciplinary Microscopy; (1977) https://doi.org/10.1117/12.955422
Event: 1977 SPIE/SPSE Technical Symposium East, 1977, Reston, United States
In the technique of analysis known as secondary ion mass spectrometry (SIMS), a beam of energetic ions (2-40 keV) strikes a sample(pd dislodges atoms lying near the surface by the process known as sputtering, Figure 1. A small fraction (104 - 10 2) of the sputtered sample atoms is emitted in a charged state, the so-called secondary ions. Because of their electrical charge, the secondary ions can be attracted by appropriate electrical fields into a mass spectrometer which disperses the ions according to their mass-to-charge ratio. Ion detection is accomplished by either an electrical detector or a photographic plate. By varying the strength of the magnetic and/or electrical field of the mass spectrometer, a mass spectrum of the positive or negative sputtered ions in the form of intensity versus mass-to-charge ratio is obtained.
© (1977) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dale E. Newbury, Dale E. Newbury, } "Ion Imaging In Secondary Ion Mass Spectrometry", Proc. SPIE 0104, Multidisciplinary Microscopy, (26 August 1977); doi: 10.1117/12.955422; https://doi.org/10.1117/12.955422

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