Electric Field And Photocurrent Considerations In Photorefractive Memory Materials

T. A. Rabson; D. M. Kim; F. K. Tittel

doi:10.1117/12.955807

13 December 1977 Electric Field And Photocurrent Considerations In Photorefractive Memory Materials

T. A. Rabson, D. M. Kim, F. K. Tittel

Proceedings Volume 0123, Optical Storage Materials and Methods; (1977) https://doi.org/10.1117/12.955807
Event: 21st Annual Technical Symposium, 1977, San Diego, United States

Abstract

High density storage of data in photosensitive electrooptic crystals has been achieved. One of the crystals with the highest writing sensitivity is LiNb0₃ doped with iron. A key factor in its high sensitivity involves the nature of the charge transport in the crystal. A series of measurements has been carried out to study the charge transport by photocurrent measurements and electrooptic measurements. The two techniques are shown to give consistent results. When described in terms of an equivalent internal electric field a dependence on light intensity is required.

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T. A. Rabson, D. M. Kim, and F. K. Tittel "Electric Field And Photocurrent Considerations In Photorefractive Memory Materials", Proc. SPIE 0123, Optical Storage Materials and Methods, (13 December 1977); https://doi.org/10.1117/12.955807

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