6 June 1978 Ge:Ga AND Ge:Be Photoconductive Detectors For Far Infrared Astronomy From A Space Platform
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Proceedings Volume 0132, Utilization of Infrared Detectors; (1978) https://doi.org/10.1117/12.956062
Event: 1978 Los Angeles Technical Symposium, 1978, Los Angeles, United States
This paper presents the major results of a NASA supported development effort on Ge:Ga and Ge:Be photoconductive detectors for use in far infrared astronomical observations from a space platform such as IRAS. Ge:Be is useful in the wavelength range from 30- to 55-µm, and Ge:Ga from 50- to 120-µm. The theory of operation and some typical test data which represent the current state of the art are given. Under a background photon flux density on the order of 1 X 109 ph/sec/cm2, an operating temperature of 3K and a measuring frequency of 1 Hz, Ge:Be detectors achieved an NEP (40 µm) of 2 to 3 x 10-16 watt/Hz½, and Ge:Ga detectors achieved an NEP (100 µm) of about 1 X 10-16 watt/Hz 1/2. At a lower backa,round flux calculated to be 4 X 108ph/sec/cm2, one Ge:Ga detector attained an NEP (100 µm) of 5 X 10-17 watt/Hz 1/2. The reproducibility and yield of these detectors are adequate to consider their use in large focal plane arrays for far infrared astronomical observations.
© (1978) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. R. Bratt, P. R. Bratt, N N. Lewis, N N. Lewis, R. L. Nielsen, R. L. Nielsen, "Ge:Ga AND Ge:Be Photoconductive Detectors For Far Infrared Astronomy From A Space Platform", Proc. SPIE 0132, Utilization of Infrared Detectors, (6 June 1978); doi: 10.1117/12.956062; https://doi.org/10.1117/12.956062

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