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6 June 1978 Infrared Photodiode Optimization For Higher Temperature Operation
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Proceedings Volume 0132, Utilization of Infrared Detectors; (1978)
Event: 1978 Los Angeles Technical Symposium, 1978, Los Angeles, United States
The performance of infrared sensitive photodiodes may be improved at higher operating temperatures by a reduction of excess volume in which minority carriers are thermally gen-erated within a diffusion length of the junction. This technique requires surface recombi-nation velocities typically less than 100 cm/sec. Calculations for HgCdTe indicate a peak D* above 1.5 x 1011 cm Hz½/w may be obtained at 190 K for a 5.0 µm cut-off wavelength.
© (1978) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. R. Borrello and M. A. Kinch "Infrared Photodiode Optimization For Higher Temperature Operation", Proc. SPIE 0132, Utilization of Infrared Detectors, (6 June 1978);

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