6 September 1978 High Resolution Lithography Of Charge Coupled Devices (CCDS) Using Projection Printing
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Abstract
A four phase transparent gate CCD has been fabricated using 1:1 projection printing on all photo-lithographic processes which required resist resolution in the 2-4 µm range on many of the masking levels. The photolithographic processes and techniques used will be described and presented.
© (1978) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Edgar D. Lancaster, F. Kub, J. Taylor, "High Resolution Lithography Of Charge Coupled Devices (CCDS) Using Projection Printing", Proc. SPIE 0135, Developments in Semiconductor Microlithography III, (6 September 1978); doi: 10.1117/12.956107; https://doi.org/10.1117/12.956107
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