6 September 1978 High Resolution Lithography Of Charge Coupled Devices (CCDS) Using Projection Printing
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Abstract
A four phase transparent gate CCD has been fabricated using 1:1 projection printing on all photo-lithographic processes which required resist resolution in the 2-4 µm range on many of the masking levels. The photolithographic processes and techniques used will be described and presented.
© (1978) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Edgar D. Lancaster, Edgar D. Lancaster, F. Kub, F. Kub, J. Taylor, J. Taylor, } "High Resolution Lithography Of Charge Coupled Devices (CCDS) Using Projection Printing", Proc. SPIE 0135, Developments in Semiconductor Microlithography III, (6 September 1978); doi: 10.1117/12.956107; https://doi.org/10.1117/12.956107
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