6 September 1978 Laser-Plasma Source For Pulsed X-Ray Lithography
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Abstract
The exposure of an x-ray resist by radiation from laser-heated plasmas was recently demonstrated. Single-shot submicrosecond exposures with a very favorable x-ray spectrum are possible. In order to reduce the cost of a laser-plasma x-ray lithography system, it is desirable to maximize the intensity in the soft (1 to about 3 keV) range. The x-ray output of laser-plasmas depends on laser pulse parameters (wavelength, pulse shape and energy), the focal conditions, and the target composition and geometry. Laser-plasma x-ray characteristics and their sensitivity to experimental parameters are reviewed in this paper. Presently available information indicates that a Nd:glass laser having pulse width in or near the 1-10 nsec range with at least 500 J of energy should be adequate for practical single-shot x-ray lithography.
© (1978) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. J. Nagel, R. R. Whitlock, J. R. Greig, R. E. Pechacek, M. C. Peckerar, "Laser-Plasma Source For Pulsed X-Ray Lithography", Proc. SPIE 0135, Developments in Semiconductor Microlithography III, (6 September 1978); doi: 10.1117/12.956112; https://doi.org/10.1117/12.956112
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