6 September 1978 Optical Linewidth Measurements On Wafers
Author Affiliations +
Abstract
An optical scanning microscope system for accurate measurement of linewidth on wafers is described. The development of this system in both theory and experiment parallels the treatment of transmitted light measurements on see-through photomasks as previously described. Threshold equations for determining edge location have been developed which include corrections for contrast and phase. In reflected light, the wavelength dependence of these parameters due to thin film interference requires a much narrower spectral bandwidth. In addition, other light losses dictate the use of laser illumination. Control of the spatial coherence of the laser is discussed. A comparison of theoretical and experimental results is given along with a comparison of reflected and transmitted light measurements.
© (1978) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Nyyssonen, "Optical Linewidth Measurements On Wafers", Proc. SPIE 0135, Developments in Semiconductor Microlithography III, (6 September 1978); doi: 10.1117/12.956121; http://dx.doi.org/10.1117/12.956121
PROCEEDINGS
5 PAGES


SHARE
KEYWORDS
Photomasks

Optical testing

Semiconducting wafers

Objectives

Wafer-level optics

Edge detection

Reflectivity

RELATED CONTENT

Optical fiber reliability models
Proceedings of SPIE (September 08 1993)
Results of calibrations of the NOAA 11 AVHRR made by...
Proceedings of SPIE (August 01 1991)
Visible lasers for mobile projection
Proceedings of SPIE (April 25 2008)

Back to Top