Proximity Effect Correction In Vector-Scan Electron-Beam Lithography

Carole I . Youngman; Norman D. Wittels

doi:10.1117/12.956113

6 September 1978 Proximity Effect Correction In Vector-Scan Electron-Beam Lithography

Carole I . Youngman, Norman D. Wittels

Proceedings Volume 0135, Developments in Semiconductor Microlithography III; (1978) https://doi.org/10.1117/12.956113
Event: Developments in Semiconductor Microlithography III, 1978, San Jose, United States

Abstract

The proximity effect in electron-beam lithography describes enhanced resist exposure due to electron scattering in the resist and backscattering from the substrate. Since good edge definition requires high resist contrast, the proximity effect can substantially alter developed pattern shapes and fidelities. This effect increases as pattern sizes decrease and becomes rather severe for submicrometer geometries. We have explored methods of compensating for the proximity effect in submicrometer patterns exposed on a vector-scan exposure system. This paper discusses two approaches which can be utilized to process figure specifications prior to exposure time to compensate for the proximity effect. We also show how these approaches fit into an overall program of pattern specification and exposure.

Citation Download Citation

Carole I . Youngman and Norman D. Wittels "Proximity Effect Correction In Vector-Scan Electron-Beam Lithography", Proc. SPIE 0135, Developments in Semiconductor Microlithography III, (6 September 1978); https://doi.org/10.1117/12.956113

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