18 April 1978 Interferometric Measurement Of Heterogeneities In Semiconductors
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Proceedings Volume 0136, 1st European Conf on Optics Applied to Metrology; (1978); doi: 10.1117/12.956130
Event: First European Conference on Optics Applied to Metrology, 1977, Strasbourg, France
Abstract
Interference method of measuring distribution of refractin index continuous heterogeneities in semiconductors are described. Difference distributions of sample thickness and refracting index are calculated by scanning three interferograms and making use of computer analysis. Distributions of sample cuneiformity and refracting index gradient may also be found as well as the speed of variation of these quantities with respect to the variation of coordinates. Measuring results of silicon sample are given. Measuring accuracy 1x10-5 may be achieved for refracting index distribution in 1 mm-thick semiconductor sample.
© (1978) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Waldemar Kowalik, "Interferometric Measurement Of Heterogeneities In Semiconductors", Proc. SPIE 0136, 1st European Conf on Optics Applied to Metrology, (18 April 1978); doi: 10.1117/12.956130; https://doi.org/10.1117/12.956130
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