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1 January 1978 Introduction To Solid State Image Scanners
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Proceedings Volume 0145, Industrial Applications of Solid State Image Scanners; (1978)
Event: Industrial Applications of Solid State Image Scanners, 1978, London, United States
Solid state image scanners are based on the generation of a pattern of charge carriers in silicon crystal when illuminated. An array of small photodiodes or depletion regions measure the carrier density, and thus the illumination, at each point. By allowing the charge carriers to collect on the photodiodes or depletion regions for a defined period, the intensity is integrated over this period. The resultant charge pattern is 'scanned', i.e. read out point-by-point at one output terminal, by one of three methods: SSPA, CID, or CCD. SSPA (Self-Scanned Photodiode Array) uses an MOST multiplexer switch driven by an MOST shift register to connect each photodiode in turn onto the output terminal. CID (Charge Injection Device) injects the charge collected on an array of depletion regions into the silicon crystal, point-by-point, by switching off the field producing the depletion. CCD (Charge Coupled Device) shifts the charge pattern from point to point across the silicon surface, between depletion regions, until it reaches the output terminal.
© (1978) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter W. Fry "Introduction To Solid State Image Scanners", Proc. SPIE 0145, Industrial Applications of Solid State Image Scanners, (1 January 1978);

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