Paper
12 December 1978 Evaluation Of A Schottky IRCCD Staring Mosaic Focal Plane
B. Capone, L. Skolnik, R. Taylor, F. Shepherd, S. Roosild, W. Ewing, W. Kosonocky, E. Kohn
Author Affiliations +
Abstract
We describe the operation and performance of two Schottky IRCCD staring sensors. Both sensors are mono-lithic and are fabricated from conventional integrated circuit grade silicon. The devices include a 256 element linear array and a 25X50 element area array of PtSi Schottky photodiodes which are sensitive from 1.1 to 4.6 μm. The 1250 element mosaic incorporates an interline transfer architecture. Signal readout for both devices is via a 4-phase buried channel CCD network and an on-chip amplifier. The focal plane may be operated between 20°K and 100°K; optimum performance is observed between 50°K and 90°K. We present examples of human thermal imaging against ambient backgrounds as well as photoresponse, thermal transfer, and resolution characteristics. Measured results are compared to theoretical predictions of performance and future developments for this class of sensor are projected.
© (1978) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Capone, L. Skolnik, R. Taylor, F. Shepherd, S. Roosild, W. Ewing, W. Kosonocky, and E. Kohn "Evaluation Of A Schottky IRCCD Staring Mosaic Focal Plane", Proc. SPIE 0156, Modern Utilization of Infrared Technology IV, (12 December 1978); https://doi.org/10.1117/12.956770
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Cited by 6 scholarly publications.
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KEYWORDS
Diodes

Sensors

Charge-coupled devices

Infrared technology

Staring arrays

Silicon

Thermography

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