17 July 1979 Influence Of Partial Coherence On Projection Printing
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A computer program for the Simulation And Modeling of Profiles for Lithography and Etching (SAMPLE) is used to explore the effects of partially coherent mask illumination on the image intensity distribution and on the developed resist profiles. Features of the image are discussed with respect to the degree of illumination coherence and to focus error. The impact of the image features on line-edge profiles in resist is explored via a resist development simulation. The minimum (toe) intensity of the image of narrow lines is defined and found to be an important factor in the control of resist linewidth. Simulated resist profiles of a typical mask pattern indicate a reasonable value of .7 for the partial coherence parameter o.
© (1979) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. M. O'Toole, M. M. O'Toole, A. R. Neureuther, A. R. Neureuther, } "Influence Of Partial Coherence On Projection Printing", Proc. SPIE 0174, Developments in Semiconductor Microlithography IV, (17 July 1979); doi: 10.1117/12.957174; https://doi.org/10.1117/12.957174


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