Use Of 436 NM Optical Step-And-Repeat Imaging For Wafer Fabrication

Geoffrey R.M. Thomas; Harry L. Coleman; Mike Lanahan

doi:10.1117/12.957173

17 July 1979 Use Of 436 NM Optical Step-And-Repeat Imaging For Wafer Fabrication

Geoffrey R.M. Thomas, Harry L. Coleman, Mike Lanahan

Proceedings Volume 0174, Developments in Semiconductor Microlithography IV; (1979) https://doi.org/10.1117/12.957173
Event: Developments in Semiconductor Microlithography IV, 1979, San Jose, United States

Abstract

The use of a 10X reduction step and repeat system to produce 1 to gum geometries over a 14.5mm diameter image for high density semiconductor wafer fabrication is presented. The impact of standing wave patterns on the development properties of photoresists are examined for substrates of various reflectivity, and efforts to minimize these effects described. Data on alignment accuracies and critical dimension tolerances is also included.

Citation Download Citation

Geoffrey R.M. Thomas, Harry L. Coleman, and Mike Lanahan "Use Of 436 NM Optical Step-And-Repeat Imaging For Wafer Fabrication", Proc. SPIE 0174, Developments in Semiconductor Microlithography IV, (17 July 1979); https://doi.org/10.1117/12.957173

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