17 July 1979 Use Of 436 NM Optical Step-And-Repeat Imaging For Wafer Fabrication
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Abstract
The use of a 10X reduction step and repeat system to produce 1 to gum geometries over a 14.5mm diameter image for high density semiconductor wafer fabrication is presented. The impact of standing wave patterns on the development properties of photoresists are examined for substrates of various reflectivity, and efforts to minimize these effects described. Data on alignment accuracies and critical dimension tolerances is also included.
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Geoffrey R.M. Thomas, Harry L. Coleman, Mike Lanahan, "Use Of 436 NM Optical Step-And-Repeat Imaging For Wafer Fabrication", Proc. SPIE 0174, Developments in Semiconductor Microlithography IV, (17 July 1979); doi: 10.1117/12.957173; https://doi.org/10.1117/12.957173
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KEYWORDS
Semiconducting wafers

Photoresist materials

Photoresist developing

Optical alignment

Reflectivity

Silicon

Wafer-level optics

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