26 July 1979 III-V Heterostructure Devices For Integrated Optics
Author Affiliations +
Proceedings Volume 0176, Guided Wave Optical Systems and Devices II; (1979); doi: 10.1117/12.957225
Event: Technical Symposium East, 1979, Washington, D.C., United States
Abstract
A review is given of recent progress in the development of integrated optical circuits involving the Al Ga1-x As/GaAs double heterostructure system. Various devices utilizing x. periodic corrugations or gratings are described briefly, whereas alternate attempts to fabricate optical circuits by wet chemical etching are discussed in more detail. The current trend to explore other III-V compounds is considered, with emphasis on the quaternary system GaxIni-xPyAs1-y Lattic matching of this quaternary to InP results in long wave-length emission, suitable for use with present optical fibers. A number of reasons are also given for increased investigation of this quaternary lattice-matched to GaAs.
© (1979) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James L. Merz, "III-V Heterostructure Devices For Integrated Optics", Proc. SPIE 0176, Guided Wave Optical Systems and Devices II, (26 July 1979); doi: 10.1117/12.957225; https://doi.org/10.1117/12.957225
PROCEEDINGS
8 PAGES


SHARE
KEYWORDS
Gallium arsenide

Aluminum

Waveguides

Gallium

Mirrors

Etching

Sensors

Back to Top