21 September 1979 GaAs Integrated Circuits And Charge-Coupled Devices (CCDs) For High-Speed Signal Processing
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Proceedings Volume 0180, Real-Time Signal Processing II; (1979) https://doi.org/10.1117/12.957329
Event: Technical Symposium East, 1979, Washington, D.C., United States
Abstract
The superior electronic properties of GaAs, as compared with silicon, make possible the achievement of much higher performance levels in GaAs signal processing devices than have been demonstrated with silicon. Only recently, however, have advanced in GaAs materials and processing technology made possible the fabrication of such devices as sub-100 ps propagation delay, high density planar GaAs integrated circuits with LSI compatible power levels', and high transfer efficiency GaAs charge coupled devices' which should be capable of multi-gigahertz clocking rate operation. These high performance device technologies should have major impact on the high speed signal processing area, making possible, through their much higher speeds and lower power requirements, system approaches which could not be practically realized with existing silicon technology.
© (1979) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard C. Eden, Richard C. Eden, Ira Deyhimy, Ira Deyhimy, } "GaAs Integrated Circuits And Charge-Coupled Devices (CCDs) For High-Speed Signal Processing", Proc. SPIE 0180, Real-Time Signal Processing II, (21 September 1979); doi: 10.1117/12.957329; https://doi.org/10.1117/12.957329
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