Liquid Phase Epitaxial PbSnTe And The Performance Of The Detector

Wu Yangxian

doi:10.1117/12.957983

17 December 1979 Liquid Phase Epitaxial PbSnTe And The Performance Of The Detector

Wu Yangxian

Proceedings Volume 0197, Modern Utilization of Infrared Technology V; (1979) https://doi.org/10.1117/12.957983
Event: 23rd Annual Technical Symposium, 1979, San Diego, United States

Abstract

The results of liquid phase epitaxially grown single crystal Pb₀,₈Sn₀,₂Te films and the hetero-epitaxially grown PbTe/Pb0,₈Sn₀,₂Te are reported. The substrates used are cut from' the vapor-phase transportation grown single crystal Pb₀,₈Sn_0.2Te with (100) orientation. PbSnTe films epitaxially grown with relatively low temperature on these substrates exhibit peak responte in the 10-10.6 um range. λς≤ 12um. Typical heterojunction detectors have a D⁺(500K,1000,1) of 2-4x10⁹cmHz ^½w^-1. it is now limited by the noise of the preamplifier. The I-V characteristic of the heterojunction is analysed. The zero bias resistance is measured to be in the range of 20-80 ohms, the quantum efficiency n to be approximately 30%. There are some generation-recombination current contributions to the diode current.

Citation Download Citation

Wu Yangxian "Liquid Phase Epitaxial PbSnTe And The Performance Of The Detector", Proc. SPIE 0197, Modern Utilization of Infrared Technology V, (17 December 1979); https://doi.org/10.1117/12.957983

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