The results of liquid phase epitaxially grown single crystal Pb0,8Sn0,2Te films and the hetero-epitaxially grown PbTe/Pb0,8Sn0,2Te are reported. The substrates used are cut from' the vapor-phase transportation grown single crystal Pb0,8Sn0.2Te with (100) orientation. PbSnTe films epitaxially grown with relatively low temperature on these substrates exhibit peak responte in the 10-10.6 um range. λς≤ 12um. Typical heterojunction detectors have a D+(500K,1000,1) of 2-4x109cmHz ½w-1. it is now limited by the noise of the preamplifier. The I-V characteristic of the heterojunction is analysed. The zero bias resistance is measured to be in the range of 20-80 ohms, the quantum efficiency n to be approximately 30%. There are some generation-recombination current contributions to the diode current.
"Liquid Phase Epitaxial PbSnTe And The Performance Of The Detector", Proc. SPIE 0197, Modern Utilization of Infrared Technology V, (17 December 1979); doi: 10.1117/12.957983; https://doi.org/10.1117/12.957983