The results of liquid phase epitaxially grown single crystal Pb0,8Sn0,2Te films and the hetero-epitaxially grown PbTe/Pb0,8Sn0,2Te are reported. The substrates used are cut from' the vapor-phase transportation grown single crystal Pb0,8Sn0.2Te with (100) orientation. PbSnTe films epitaxially grown with relatively low temperature on these substrates exhibit peak responte in the 10-10.6 um range. λς≤ 12um. Typical heterojunction detectors have a D+(500K,1000,1) of 2-4x109cmHz ½w-1. it is now limited by the noise of the preamplifier. The I-V characteristic of the heterojunction is analysed. The zero bias resistance is measured to be in the range of 20-80 ohms, the quantum efficiency n to be approximately 30%. There are some generation-recombination current contributions to the diode current.
Wu Yangxian, Wu Yangxian,
"Liquid Phase Epitaxial PbSnTe And The Performance Of The Detector", Proc. SPIE 0197, Modern Utilization of Infrared Technology V, (17 December 1979); doi: 10.1117/12.957983; https://doi.org/10.1117/12.957983