The physical mechanisms responsible for the annealing of ion implanted semiconductors for a wide range of materials and annealing conditions have been identified through the use of in-situ dynamical measurements of optical properties. These measurements combined with post-anneal sample characterization, i.e., channeling, electrical measurements, etc., lead to the identification of two different annealing mechanisms. For the case of Q-switched lasers a liquid phase epitaxial regrowth of the damaged layer is indicated. For c.w. lasers solid phase epitaxial regrowth can occur.
D. H. Auston,
J. A. Golovchenko,
T. N. C. Venkatesan,
"Dynamics Of Laser Annealing", Proc. SPIE 0198, Laser Applications in Materials Processing, (24 January 1980); doi: 10.1117/12.958015; https://doi.org/10.1117/12.958015