24 January 1980 Dynamics Of Laser Annealing
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Abstract
The physical mechanisms responsible for the annealing of ion implanted semiconductors for a wide range of materials and annealing conditions have been identified through the use of in-situ dynamical measurements of optical properties. These measurements combined with post-anneal sample characterization, i.e., channeling, electrical measurements, etc., lead to the identification of two different annealing mechanisms. For the case of Q-switched lasers a liquid phase epitaxial regrowth of the damaged layer is indicated. For c.w. lasers solid phase epitaxial regrowth can occur.
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D. H. Auston, D. H. Auston, J. A. Golovchenko, J. A. Golovchenko, T. N. C. Venkatesan, T. N. C. Venkatesan, } "Dynamics Of Laser Annealing", Proc. SPIE 0198, Laser Applications in Materials Processing, (24 January 1980); doi: 10.1117/12.958015; https://doi.org/10.1117/12.958015
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