12 December 1979 Application Of Non-Silicon Schottky Barrier Charge-Coupled Devices (CCDs) For Star Trackers
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Proceedings Volume 0203, Recent Advances in TV Sensors and Systems; (1979); doi: 10.1117/12.958135
Event: 23rd Annual Technical Symposium, 1979, San Diego, United States
Abstract
The demonstration of high charge transfer efficiencies in Schottky barrier GaAs CCEs1 allows the exploration of this technology for optical imagers for star tracking applications. A device concept is described which utilizes this development and illustrates optimization of the device parameters for ionizing radiation environments, high operational temperature and long storage time requirements. Considerations are given to the noise components in relation to the star signal and attention is drawn to the necessity of minimizing the active device volume when designing for operation in a radiation environment. The shot noise multiplier associated with operating the device in a gamma environment has been calculated and is expected to be lower for GaAs based devices than for silicon. The requirements for imaging seventh magnitude stars will be discussed. The technology employs a heterojunction CCD approach consisting of a GaAs absorber layer, a GaAlAs channel layer, and a GaAlAs passivation layer, sealed to glass. The radiation hardness of this device will be discussed for neutron and gamma irradiation.
© (1979) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. H. Pollard, J. J. Boyle, "Application Of Non-Silicon Schottky Barrier Charge-Coupled Devices (CCDs) For Star Trackers", Proc. SPIE 0203, Recent Advances in TV Sensors and Systems, (12 December 1979); doi: 10.1117/12.958135; https://doi.org/10.1117/12.958135
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KEYWORDS
Gallium arsenide

Silicon

Charge-coupled devices

Stars

Electrons

CCD image sensors

Sensors

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