12 December 1979 Monolithic InSb Imaging Arrays With Charge-Coupled Device (CCD) Readout
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Proceedings Volume 0203, Recent Advances in TV Sensors and Systems; (1979); doi: 10.1117/12.958139
Event: 23rd Annual Technical Symposium, 1979, San Diego, United States
Detection of infrared radiation and signal readout has been demonstrated on a monolithic InSb charge coupled infrared imaging device (CCIRID). The device is a 20- element linear imager with MOS detectors coupled to a four-phase, surface channel, charge transfer structure. The charge transfer device is p-channel and has planar ion implanted diode structures for fat zero input and charge readout. Charge transfer efficiency of the present 20-element linear imager is 0.995. Sensitivity measurements on the MOS infrared detectors have yielded a single element D* > 8 x 1011 cm Hz 1/2 /W with an average D* - 5.4 x 1011 cm Hz 1/2 /W over the 20-element array. Data is presented showing the operational characteristics of the 20-element linear imager under various conditions of electrical and optical inputs in both a multiplexed and a time delay and integration (TDI) mode. Plans for a monolithic InSb 100-element linear imager and a 20 x 16 TDI linear imager are discussed.
© (1979) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. E. Miller, H. D. Hendricks, R. D. Thom, "Monolithic InSb Imaging Arrays With Charge-Coupled Device (CCD) Readout", Proc. SPIE 0203, Recent Advances in TV Sensors and Systems, (12 December 1979); doi: 10.1117/12.958139; https://doi.org/10.1117/12.958139


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