12 December 1979 Monolithic InSb Imaging Arrays With Charge-Coupled Device (CCD) Readout
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Abstract
Detection of infrared radiation and signal readout has been demonstrated on a monolithic InSb charge coupled infrared imaging device (CCIRID). The device is a 20- element linear imager with MOS detectors coupled to a four-phase, surface channel, charge transfer structure. The charge transfer device is p-channel and has planar ion implanted diode structures for fat zero input and charge readout. Charge transfer efficiency of the present 20-element linear imager is 0.995. Sensitivity measurements on the MOS infrared detectors have yielded a single element D* > 8 x 1011 cm Hz 1/2 /W with an average D* - 5.4 x 1011 cm Hz 1/2 /W over the 20-element array. Data is presented showing the operational characteristics of the 20-element linear imager under various conditions of electrical and optical inputs in both a multiplexed and a time delay and integration (TDI) mode. Plans for a monolithic InSb 100-element linear imager and a 20 x 16 TDI linear imager are discussed.
© (1979) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. E. Miller, W. E. Miller, H. D. Hendricks, H. D. Hendricks, R. D. Thom, R. D. Thom, } "Monolithic InSb Imaging Arrays With Charge-Coupled Device (CCD) Readout", Proc. SPIE 0203, Recent Advances in TV Sensors and Systems, (12 December 1979); doi: 10.1117/12.958139; https://doi.org/10.1117/12.958139
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