7 May 1980 Extrinsic Charge-Extraction Device (XCED)--An Extrinsic-Silicon Focal-Plane Array Architecture
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Proceedings Volume 0217, Advances in Focal Plane Technology; (1980) https://doi.org/10.1117/12.958474
Event: 1980 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Abstract
The XCED (extrinsic charge-extraction device) is a unique focal-plane array structure designed for staring infrared-imaging applications. Extrinsic-silicon detectors, MOS integrating storage capacitors, and unique accumulation mode multiplexing devices are combined in a two-dimensional array within a single monolithic chip. Zinc-doped silicon has been studied and utilized to fabricate detectors sensitive in the 2 to 4 Ilm spectral band with BLIP operating temperatures above 110°K. The potentially severe problems for staring arrays of element-to-element nonuniformities and detector storage saturation have been solved. Preliminary results and thermal imagery are shown for a 16 x 16 element array.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David N. Pocock, David N. Pocock, Kuang Y. Chiu, Kuang Y. Chiu, Rolland A. Missman, Rolland A. Missman, David E. Nuttall, David E. Nuttall, } "Extrinsic Charge-Extraction Device (XCED)--An Extrinsic-Silicon Focal-Plane Array Architecture", Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); doi: 10.1117/12.958474; https://doi.org/10.1117/12.958474
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