Translator Disclaimer
7 May 1980 HgCdTe Charge-Coupled Detectors (CCD)
Author Affiliations +
Proceedings Volume 0217, Advances in Focal Plane Technology; (1980) https://doi.org/10.1117/12.958480
Event: 1980 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Abstract
CCD shift registers have been investigated in 4.4 pm HgCdTe for time delay and integrate (TDI) enhancement of responsivity and signal to noise ratio and for multiplexing a number of TDI shift registers. CCD linear arrays and area arrays have been operated from 77K to 140K cooling and from 50 kHz to above 1 MHz. Charge transfer efficiency (CTE) has been measured to 0.9999 on a 32 stage four phase p channel device. Infrared sensitivity measure-ments show, D* values above 1012 cmHz1/2/W for full TDI enhancement of32. TDI has been demonstrated utilizing focused laser illumination scanned synchronously with the clocked charge. Sensitivity and noise analyses have been made to show limits of detection for multiplexed arrays.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. R. Borrello, R. A. Chapman, A. Simmons, J. D. Beck, M. A. Kinch, and C. G. Roberts "HgCdTe Charge-Coupled Detectors (CCD)", Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); https://doi.org/10.1117/12.958480
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Real-time processor for staring receivers
Proceedings of SPIE (June 30 1992)
Advances In HgCdTe Infrared Focal Plane Technology
Proceedings of SPIE (November 08 1977)
10 x 132 CMOS CCD readout with 25 um pitch...
Proceedings of SPIE (June 30 1992)
6k-pixel 160-MHz CCD linescan sensor
Proceedings of SPIE (May 14 2000)

Back to Top