7 May 1980 HgCdTe Hybrid Focal-Plane Arrays
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Proceedings Volume 0217, Advances in Focal Plane Technology; (1980) https://doi.org/10.1117/12.958495
Event: 1980 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Abstract
Second generation infrared imaging systems require high density focal plane arrays for both staring and scanned applications. To meet these needs, a focal plane structure using HgCdTe photodiodes for detectors and Si CCDs for signal processing has been developed. Although conventional ion implanted hybrid arrays have successfully been interfaced to CCD multiplexers, hybrid arrays fabricated on LPE layers offer some inherent advantages with respect to performance, processing and yields. It has been determined that hetero-structure diodes fabricated by a Hg infinite melt LPE technique give superior performance relative to conventional ion implanted devices. The devices consist of n-type LPE layers grown on p-type substrates. The layers are n-type as grown and no annealing of the grown layer is required. The deVices exhibit high RoA products and good compositional uniformity. Data will be presented on devices fabricated for both 8- to 12-µm and 3- to 5-µm applications.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. J. Riley, K. J. Riley, A. H. Lockwood, A. H. Lockwood, } "HgCdTe Hybrid Focal-Plane Arrays", Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); doi: 10.1117/12.958495; https://doi.org/10.1117/12.958495
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