7 May 1980 InAsSb Hybrid Imager Evaluation
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Proceedings Volume 0217, Advances in Focal Plane Technology; (1980) https://doi.org/10.1117/12.958496
Event: 1980 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Abstract
Current research on infrared hybrid focal planes is directed toward devices in which detection occurs in a p-n junction formed in an intrinsic narrow energy bandgap semiconductor, and signal processing is accomplished in a Si CCD multiplexer which is electrically interfaced to the detector array. A hybrid array such as this, where the detector format is a 32 x 32 matrix, has been fabricated. The active material is backside-illuminated InAsSb which has been planar processed and fully passivated. The cutoff wavelength is 4.0 μm at the operating temperature of 77K. The CCD is four phase with a two level polysilicon gate structure. The signal input is via direct injection with an option for dc suppression. Operation of the focal plane in a staring mode that uses dc suppression is discussed. Data derived from the video output is presented; this includes responsivity and detectivity. Off focal plane non-uniformity compensation is also discussed. Displays of thermal images utilizing processed data from the hybrid focal plane array will be shown.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. Rode, "InAsSb Hybrid Imager Evaluation", Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); doi: 10.1117/12.958496; https://doi.org/10.1117/12.958496
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