7 May 1980 Metal Insulated Semiconductor (MIS) Radiation Effects Considerations For Infrared Focal-Plane Arrays
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Proceedings Volume 0217, Advances in Focal Plane Technology; (1980) https://doi.org/10.1117/12.958493
Event: 1980 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Flatband voltage shifts on ther order of -2 volts/104 rad (Si) are observed for all MOS devices with 1000 R thick oxides irradiated at temperatures below 100°K. For example, the radiation hardness of "process optimized" oxides, which are radiation hard at room temperature with threshold shifts of -1V/106 rad (Si) for 1000 Å oxides, is degraded by two orders of magnitude when irradiated below 100°K. Flatband voltage shifts as small as0-1 volt per 106 rad (Si) have been measured on thin oxide MNOS capacitors irradiated at 80 K. The threshold shift in a p-buried channel CCD linear shift register, fabricated with an oxide/ nitride dual gate insulator and double-level polysilicon gates and irradiated with the device operating, was -1 volt after 10° rad (Si) dose at 80°K. The CCDs were operational using the preirradiation bias conditions after 10° rad (Si) at 80°K, and the CCD transfer efficiency was essentially unchanged at 0.9999.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. M. Killiany, J. M. Killiany, N. S. Saks, N. S. Saks, "Metal Insulated Semiconductor (MIS) Radiation Effects Considerations For Infrared Focal-Plane Arrays", Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); doi: 10.1117/12.958493; https://doi.org/10.1117/12.958493


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