Monolithic HgCdTe Focal Plane Array Structures

C. G. Roberts; S R . Borrello; R. A. Chapman

doi:10.1117/12.958475

7 May 1980 Monolithic HgCdTe Focal Plane Array Structures

C. G. Roberts, S R . Borrello, R. A. Chapman

Proceedings Volume 0217, Advances in Focal Plane Technology; (1980) https://doi.org/10.1117/12.958475
Event: 1980 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

Sophisticated infrared imaging systems require complex focal plane device structures to perform the basic functions of (1) detection, (2) time-delay-and-integration (TDI), (3) multiplexing, and possibly (4) scanning in large array formats with minimal on-focal-plane power dissipation. Monolithic HgCdTe charge transfer device structures are promising candidates for many focal plane requirements. Charge coupled devices (CCDs) are the natural structure for scanning system focal pl.nes which utili:e TN. Charge injection devices (CID's) are directly applicable to staring system focal plane requirements. This paper discusses the applicability and design considerations of various devices which have been developed using this technology.

Citation Download Citation

C. G. Roberts, S R . Borrello, and R. A. Chapman "Monolithic HgCdTe Focal Plane Array Structures", Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); https://doi.org/10.1117/12.958475

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