5 September 1980 A New Step-By-Step Aligner For Very Large Scale Integration (VLSI) Production
Author Affiliations +
Abstract
Technological considerations of direct wafer stepping are examined and the requirements of high volume V.L.S.I. production are identified. An advanced step-and-repeat alignment system is presented which fulfills, to a high degree, the criteria developed. Its high numerical aperture 10:1 reduction lens provides high resolution at high contrast level. A new designed illumination system supplies high exposure intensity at excellent uniformity. An automatic step-by-step alignment, focusing and leveling system compensates for irregular wafer topography and its changes during processing. By the capability to follow images already present on the wafer, it allows cross-matching with other exposure systems used for less critical manufacturing steps. The through-the-lens system of feedback-controlled alignment and true focus recognition eliminates from the machine geometric and optical changes such as those caused by temperature variation. Means for protecting both reticle and wafer against such environmental influences as dust, temperature and vibrations are provided. Equipment design permits high throughput for a large variety of die formats. High productivity is achieved by microprocessor-controlled functions and automatic handling as well as specially developed high speed displacement devices. The instrument presented promises new levels of productivity and working line widths while drawing on current knowledge in resist technology and wafer processing.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Herbert E. Mayer, Ernst W. Loebach, "A New Step-By-Step Aligner For Very Large Scale Integration (VLSI) Production", Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); doi: 10.1117/12.958618; https://doi.org/10.1117/12.958618
PROCEEDINGS
10 PAGES


SHARE
RELATED CONTENT

New Generation Of 1:1 Optical Projection Mask Aligners
Proceedings of SPIE (July 17 1979)
Patterning 80 nm gates using 248 nm lithography an...
Proceedings of SPIE (September 14 2001)
Defect dispositioning in a reticle qualification process
Proceedings of SPIE (March 11 2002)
Mix And Match-10x Reduction Wafer Steppers
Proceedings of SPIE (September 13 1982)
Automatic Creation of Stepper Job Files
Proceedings of SPIE (July 25 1989)
Overlay Tolerances For Vlsi Using Wafer Steppers
Proceedings of SPIE (January 01 1988)

Back to Top