Translator Disclaimer
5 September 1980 Calibration Of Optical Systems For Linewidth Measurements On Wafers
Author Affiliations +
In contrast to earlier work with nearly opaque photomasks, optical linewidth measurements on wafers encompass materials with a much wider variation in optical parameters and material profiles. Accurate optical edge detection requires corrections for both the relative reflectance and phase at the line edge because of the partial coherence present in optical microscopes. However, measurement systems which cannot provide the appropriate corrections and cannot detect edge location accurately can be calibrated. Since the correction curve is material dependent, calibrated standards are theoretically required for each step in the wafer fabrication process where linewidths are measured. In the proposed approach for thin layers (less than 200 nm), a small number of etched silicon-dioxide-on-silicon wafers can be used for calibration of a large class of wafer materials. Examples of wafer calibration data for filar, image-splitting and image-scanning systems are given. The problems associated with accurate linewidth measurement and calibration for thick layers are also discussed.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Nyyssonen "Calibration Of Optical Systems For Linewidth Measurements On Wafers", Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980);


Optical Linewidth Measurements On Wafers
Proceedings of SPIE (September 06 1978)
Substrate aware OPC rules for edge effect in block levels
Proceedings of SPIE (September 24 2010)
CD measurements of IPL stencil masks with optical microscopes
Proceedings of SPIE (December 30 1999)

Back to Top