Characterization of Al-Si Plasma Etching And Its Affect On Metal Oxide Semiconductor (MOS) Electrical Parameters

Barry LeBeau; Bob Wourms

doi:10.1117/12.958625

5 September 1980 Characterization of Al-Si Plasma Etching And Its Affect On Metal Oxide Semiconductor (MOS) Electrical Parameters

Barry LeBeau, Bob Wourms

Author Affiliations +

Proceedings Volume 0221, Developments in Semiconductor Microlithography V; (1980) https://doi.org/10.1117/12.958625
Event: Semiconductor Microlithography V, 1980, San Jose, United States

Abstract

Aluminum plus Silicon alloys were etched using a four step process in a planar parallel plate plasma reactor. Chlorine based gas mixtures are used for a rapid etch of the aluminum and a fluorine based gas mixture is used to remove the residual silicon. Wafers patterned with positive and negative photoresists and an etch stop layer of silicon dioxide were used to produce 16K n-channel MOS memory devices. The wafers were processed in a split lot experiment using plasma processing and standard wet chemical etching. Working devices fabricated with these processes were electrically tested. SEM photographs show the resist degradation and the resulting alloy edge profile.

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Barry LeBeau and Bob Wourms "Characterization of Al-Si Plasma Etching And Its Affect On Metal Oxide Semiconductor (MOS) Electrical Parameters", Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); https://doi.org/10.1117/12.958625

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