5 September 1980 Dimensional Control And Profile Contouring Of Plasma Etched Polysilicon
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Abstract
Linewidth control and profile contouring of polysilicon by anisotropic plasma etching with Freon 115, (CC1F5), and Freon 115/oxygen gas mixtures were investigated utilizing an LFE model 1002-P plana plasma etcher with a laser interferometric endpoint detector. It was found that Freon 115 etches anisotropicly with a reentrant edge profile and good photoresist and Si02 etch selectivity. A slight amount of undercutting was observed with overetching and was found to be related to trace amounts of oxygen in the Freon 115 plasma discharge. Freon 115/oxygen mixtures were investigated. It was determined that the polysilicon etch rate and the degree of anisotropy depends strongly on the oxygen concentration. Various combinations of anisotropic/isotropic etch sequences were found to have useful polysilicon edge contouring properties.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steven C. Selbrede, Steven C. Selbrede, "Dimensional Control And Profile Contouring Of Plasma Etched Polysilicon", Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); doi: 10.1117/12.958624; https://doi.org/10.1117/12.958624
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