5 September 1980 Macroelectronic Photolithography: I-The Optimization Of Photoresist Application By Roller Coating
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Abstract
Macroelectronic photolithography is an extension of conventional photolithographic processes to produce high resolution patterning of thin film integrated circuits over large area substrates. Such patterns are needed in fabricating the addressing circuitry for flat panel liquid crystal displays. The first important step in macroelectronic photolithography involves the development of reliable large area coating processes for photoresist materials. This paper deals with the optimization of the roller coating process for Shipley AZ-1350 J positive photoresist to achieve a resolution of 4 μm line widths and spacings extended and distributed over 10 cm x 10 cm glass substrates. Resist viscosity, doctor bar pressure and roller/substrate interference level were investigated to achieve resist thickness uniformity of ±0.1 μm; this variation in resist thickness would cause a variation of ±0.6 μm in line width. Other problems associated with the photofabrication of thin film macrocircuits are discussed. These include mask preparation, inspection and etching processes. Anticipated solutions to these problems are briefly outlined.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. A. Bond, R. A. Bond, H. M. Naguib, H. M. Naguib, } "Macroelectronic Photolithography: I-The Optimization Of Photoresist Application By Roller Coating", Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); doi: 10.1117/12.958627; https://doi.org/10.1117/12.958627
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