Methods of locating and correcting' defects on 10X reticles used for optical step-and-repeat on silicon wafers are presented. The impact of defect type, size, location, and wafer processing on VLSI devices with 1 to 3μm geometries over large clear and dark fields is examined and efforts to minimize defects by improving equipment and materials are discussed. Data gathered from visual and computer analysis are also included.
Harry L. Coleman,
"Nearly Perfect Reticles For Direct Wafer Steppers", Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); doi: 10.1117/12.958619; https://doi.org/10.1117/12.958619