Translator Disclaimer
5 September 1980 Nearly Perfect Reticles For Direct Wafer Steppers
Author Affiliations +
Abstract
Methods of locating and correcting' defects on 10X reticles used for optical step-and-repeat on silicon wafers are presented. The impact of defect type, size, location, and wafer processing on VLSI devices with 1 to 3μm geometries over large clear and dark fields is examined and efforts to minimize defects by improving equipment and materials are discussed. Data gathered from visual and computer analysis are also included.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harry L. Coleman "Nearly Perfect Reticles For Direct Wafer Steppers", Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); https://doi.org/10.1117/12.958619
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Printability and detection of backside defects on photomasks
Proceedings of SPIE (October 13 2011)
GOI characterization of 300-mm furnace tools
Proceedings of SPIE (July 11 2002)
A New Step By Step Aligner For Very Large Scale...
Proceedings of SPIE (September 04 1980)
Investigation on immersion defectivity root cause
Proceedings of SPIE (May 02 2007)

Back to Top