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5 September 1980 Optimization Of Photoresist Processing For Step-And-Repeat Exposure Systems
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The advent of the step and repeat exposure of integrated circuits demands process optimization in order to effectively utilize the available image resolution and maximize wafer thruput. This can be achieved by characterizing the photoprocess chemistry for step and repeat lithography. To date, exposure optimization has been primarily determined by the considerations of line width and visual appearance of photoresist. This paper suggests a method to characterize various photoresists with respect to UV sensitivity, contrast, and process latitude. The "gamma" function is a convenient method of expressing the sensitivity and contrast of photoresist systems. Gamma is the slope of the minimum versus the maximum exposure time for a given photoresist: y= {log10(D0/Di)}-1 This paper describes the gamma function of several common negative and positive photo-resists obtained with the use of a Mann Type 4800 DSW Wafer StepperTM, a new Mann Type 480 Radiometer, and the Nano Spec/AFT thin film measurement tool. Once the chemical "bench mark" of a photoresist is established, the desired attributes of line width and visual characteristics can be achieved within the required chemical constraints.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. P. Shaughnessy and R. L. Ruddell "Optimization Of Photoresist Processing For Step-And-Repeat Exposure Systems", Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980);

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