Registration And Wafer Distortion In The Production Environment

J. Hester; C. Vesper; R . Cody; J E. Martin

doi:10.1117/12.958629

5 September 1980 Registration And Wafer Distortion In The Production Environment

J. Hester, C. Vesper, R . Cody, J E. Martin

Proceedings Volume 0221, Developments in Semiconductor Microlithography V; (1980) https://doi.org/10.1117/12.958629
Event: Semiconductor Microlithography V, 1980, San Jose, United States

Abstract

Production of MOS/LSI circuits with minimum design rule dimensions of 4-6 microns without complete self-aligning features has provided the opportunity to study several aspects of mask to wafer registration. The mask working tools and wafers can be major contributors to misregistration. Detailed measurements and analysis are presented to illuminate the contribution of mask substrate material and wafer physical characteristics (surface, texture, thickness, crystal type, crystal defects) to misregistration. Conclusions are drawn with regard to the practical solution to misregistration in the production environment. Low expansion substrates for masks and thick (20 mil) wafers provide adequate dimensional control for registration.

Citation Download Citation

J. Hester, C. Vesper, R . Cody, and J E. Martin "Registration And Wafer Distortion In The Production Environment", Proc. SPIE 0221, Developments in Semiconductor Microlithography V, (5 September 1980); https://doi.org/10.1117/12.958629

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