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6 August 1980 Advances in InSb Charge Injection Device (CID) Focal Planes
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Proceedings Volume 0225, Infrared Image Sensor Technology; (1980)
Event: 1980 Technical Symposium East, 1980, Washington, D.C., United States
This paper reviews the status of two Indium Antimonide Charge Injection Device (CID) focal planes, one composed of multiple line arrays, the other made with an area array using random access addressing. After an introduction to CID operation, factors governing Performance Efficiency (PE) in both line and area arrays are considered and compared to experimental results. The charge sharing mode of operation of a two dimensional array is presented, along with its perform-ance implications. The linear focal plane consists of 48 linear arrays, each with 64 elements. Each InSb array is addressed by a silicon scanner chip. The scanner outputs are serviced by preamp chips mounted perpendicular to the focal plane. The 32x32 element area arrays have been coupled to combinatorial decoders permitting random selection of any site of the array. Focal planes consisting of a single 32x32 array with two silicon decoders mounted in sealed off glass dewars are described.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. D. Gibbons, J. M. Swab, W. E. Davern, M. L. Winn, T. C. Brusgard, and R. W. Aldrich "Advances in InSb Charge Injection Device (CID) Focal Planes", Proc. SPIE 0225, Infrared Image Sensor Technology, (6 August 1980);


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