Bismuth-Doped Silicon: An Extrinsic Detector For Long-Wavelength Infrared (LWIR) Applications

Christopher M. Parry

doi:10.1117/12.959299

18 February 1981 Bismuth-Doped Silicon: An Extrinsic Detector For Long-Wavelength Infrared (LWIR) Applications

Christopher M. Parry

Proceedings Volume 0244, Mosaic Focal Plane Methodologies I; (1981) https://doi.org/10.1117/12.959299
Event: 24th Annual Technical Symposium, 1980, San Diego, United States

Abstract

Basic properties pertinent to the application of bismuth-doped silicon as an infrared-photoconducting detector material are described. Si:Bi provides a viable n-type alterna-tive to the p-type gallium-doped material that has been more extensively used in the past.

Citation Download Citation

Christopher M. Parry "Bismuth-Doped Silicon: An Extrinsic Detector For Long-Wavelength Infrared (LWIR) Applications", Proc. SPIE 0244, Mosaic Focal Plane Methodologies I, (18 February 1981); https://doi.org/10.1117/12.959299

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