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18 February 1981 Photovoltaic Hg1-xCdxTe Technology For Elevated Temperature Focal Planes
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Abstract
Recent advances in Hgl-xCdxTe photodiode technology have resulted in increased detector sensitivity at elevated temperatures over the spectral region from 1-20 μm. Short wavelength photodiodes sensitive to 1-3 pm radiation have room temperature peak detectivities, Dλ, between 4 x 1011 and 8 x 108 cm Hz1/2/W, dependent on peak wavelength, A. Medium wavip 2length photodiodes sensitive to 3-5 im radiation have peak detectivities of 1 x 1011 and 1 x 1012 cm Hz1//W at temperatures of 193 K and 130 K, respectively. Long wavelength photodiodes sensitive to 12 μm radiation have peak detectivities of 5 x 1010 cm Hz /W at 65 K, and 5 x 1011 cm Hz ½/W at 10 K.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. LoVecchio and A. K. Sood "Photovoltaic Hg1-xCdxTe Technology For Elevated Temperature Focal Planes", Proc. SPIE 0244, Mosaic Focal Plane Methodologies I, (18 February 1981); https://doi.org/10.1117/12.959302
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