3 December 1980 Preamplifier Noise In Indium Antimonide Detector Systems
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Abstract
Voltage noise measurements have been made at temperatures from 77 to 150 K with three JFET's and a preamplifier which closely resembles one used with InSb photovoltaic detectors. noise minima were detected with the three JFET's at temperatures of 100-115 K, but the level Df voltage noise for two of the three JFET's was found to be below the noise level of InSb detector systems.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul D. LeVan, Paul D. LeVan, } "Preamplifier Noise In Indium Antimonide Detector Systems", Proc. SPIE 0246, Contemporary Infrared Sensors and Instruments, (3 December 1980); doi: 10.1117/12.959353; https://doi.org/10.1117/12.959353
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