3 December 1980 Preamplifier Noise In Indium Antimonide Detector Systems
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Abstract
Voltage noise measurements have been made at temperatures from 77 to 150 K with three JFET's and a preamplifier which closely resembles one used with InSb photovoltaic detectors. noise minima were detected with the three JFET's at temperatures of 100-115 K, but the level Df voltage noise for two of the three JFET's was found to be below the noise level of InSb detector systems.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul D. LeVan, "Preamplifier Noise In Indium Antimonide Detector Systems", Proc. SPIE 0246, Contemporary Infrared Sensors and Instruments, (3 December 1980); doi: 10.1117/12.959353; https://doi.org/10.1117/12.959353
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