25 November 1980 Experimental and Theoretical Investigations Of The Quality Factor For N + P Silicon Solar Cells
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Abstract
Many N+P INJ P silicon solar cells made with silicon from different growth techniques have current-voltage relations of the form: I = I0 [exp(qV/AkT) - 1] where the quality factor A is non-integral, is >1 and shows a temperature dependence. The dark forward characteristics of such cells have been measured over a range of temperatures and the behavior of the factor A derived from them. Lack of agreement with previous models has led to the development of a new model in which N+ conduction electrons tunnel to deep levels near that side, these levels being due to junction contamination by impurities. Electron recombination then occurs with holes thermally assisted into the junction from the P side. This mechanism involves increased I0 values over those for diffusion diode processes and thus reduces the cell power conversion efficiency.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. F. J. Garlick, G. F. J. Garlick, A. H. Kachare, A. H. Kachare, } "Experimental and Theoretical Investigations Of The Quality Factor For N + P Silicon Solar Cells", Proc. SPIE 0248, Role of Electro-Optics in Photovoltaic Energy Conversion, (25 November 1980); doi: 10.1117/12.970583; https://doi.org/10.1117/12.970583
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