25 November 1980 Hot Carrier Relaxation In Amorphous Germanium
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Abstract
The ultimate expected efficiencies of thin film amorphous solar cells may be raised by using amorphous alloys of germanium and silicon. To date, no single measurement technique has appeared that directly and decisively identifies and characterizes the key photovoltaic related phenomena occuring in solar cell grade amorphous semiconductors. In this presentation, an ultra high speed electrooptical approach to the measurement of the optical and electrical properties of amorphous semiconducting thin films is described. Results of measurements performed to date on amorphous germanium alloys are presented and the implications of the data regarding solar cell applications are discussed.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. P. DeFonzo, A. P. DeFonzo, } "Hot Carrier Relaxation In Amorphous Germanium", Proc. SPIE 0248, Role of Electro-Optics in Photovoltaic Energy Conversion, (25 November 1980); doi: 10.1117/12.970585; https://doi.org/10.1117/12.970585
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