25 November 1980 Photoelectrochemical Corrosion of Semiconductors for Solar Cells
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Experimental results on stabilization against photo-induced corrosion of n-Si and n-GaAs in contact with electrolytes are given. Photocorrosion is examined on silicon using voltammetry on GaAs using a rotating ring-disk technique. The most extensive testing of stability was done for n-Si in a solution of N,N,N',N'-tetramethyl-p-phenvlenediamine in methanol and for n-GaAs in an aqueous solution of Fe(II) EDTA. Multiple waves were observed for the oxidation of several organic compounds on illuminated n-Si. To explain this auasi-metallic behavior a model based on an intervening thin surface oxide is postulated. In the case of n-GaAs the influence of mechanical surface damage, pH of the solution and redox couple used was studied. It is found that surface defects areativ enhance the susceptibility of the GaAs to photo-induced corrosion.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. J. Madou, M. J. Madou, K. W. Frese, K. W. Frese, S. R. Morrison, S. R. Morrison, } "Photoelectrochemical Corrosion of Semiconductors for Solar Cells", Proc. SPIE 0248, Role of Electro-Optics in Photovoltaic Energy Conversion, (25 November 1980); doi: 10.1117/12.970590; https://doi.org/10.1117/12.970590


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